Ion beams have been for the past decades used routinely to modify and study the structure and properties of metals, insulators and semiconductors. Making use of different ion-target interactions, either by nuclear collisions or electronic excitations, ion beams are used to introduce dopants and defects, create nano-patterns, grow layered structures, and conduct degradation studies.
| Network | Infrastructure | Instrument | Country | Link |
|---|---|---|---|---|
| RADIATE | CMAM | 5 MV tandem + Implantation BL | ES | More details |
| RADIATE | CMAM | 5 MV tandem + internal and external microbeam | ES | More details |
| RADIATE | GANIL | GANIL | FR | |
| RADIATE | IBC | 3 MV Tandem Accelerator | DE | More details |
| RADIATE | IBC | 6 MV Tandem Accelerator | DE | More details |
| RADIATE | IBC | 500 kV Implanter | DE | More details |
| RADIATE | IBC | Low-energy ion irradiation | DE | More details |
| RADIATE | IBL | High flux 210 kV ion implanter, model S1090 Danfysik | PT | More details |
| RADIATE | IMBL | Danfysik 1090 High Current Implanter | BE | More details |
| RADIATE | LIP | 6 MV Tandem Accelerator | CH | More details |
| RADIATE | LIP | Beamlines at 1.7 MV Tandetron | CH | |
| RADIATE | LT | Ion beam lines at Tandetron | CZ | More details |
| RADIATE | RBI-AF | 1 MV Tandentron and 6 MV Tandem Van de Graaff | HR | More details |
| RADIATE | Tandem Laboratory | 350 kV Implanter | SE | More details |