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DTSTART;TZID=Europe/Paris:20241206T100000
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SUMMARY:Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the way for efficient green light emission
DESCRIPTION:Zoom webinar | Replay on Youtube\n  \nMamour Sall\,  \nCIMAP (CEA\, CNRS\, ENSICAEN\, Univ. Caen)\, France \nThe nitride semiconductors\, (Al\,Ga\,In) N present remarkable optical and electronic properties. They have been widely used for optoelectronic applications with high-efficiency blue light-emitting diodes (LEDs)\nbased on InGaN/GaN multiple quantum well (MQW) structures [1]. Emission at higher wavelength\, for instance in the green\, could be obtained by increasing the concentration of indium but with a strong\nquantum-confined Stark effect due to piezoelectric polarization [2]. To mitigate this effect\, we created atomic intermixing at the InGaN/GaN MQW by using Swift Heavy Ion (SHI) irradiation. The resulting\nchemical composition gradient has been suggested to improve the MQW emission efficiency [3].\nThrough a careful combination of well-chosen energies SHI irradiation and low temperature thermal treatment\, either during or after irradiation\, we successfully created a compositional gradient at the MQWs\ninterfaces while preserving the material luminescence. \nReferences:\n[1] S. Nakamura et al.\, Japanese J. Appl. Physics\, Part 2 Lett.\, vol. 35\, no. 1 B\, p. L74\, Jan. 1996\n[2] S. P. Denbaars et al.\, Acta Mater.\, vol. 61\, no. 3\, pp. 945–951\, Feb. 2013\n[3] K. P. O’Donnell et al.\, Phys. Status Solidi – Rapid Res. Lett.\, vol. 6\, no. 2\, pp. 49–52\, 2012
URL:https://remade-project.eu/index.php/event/polymer-under-ionizing-radiation-an-evolution-towards-recycling/
CATEGORIES:Seminar
ATTACH;FMTTYPE=image/jpeg:https://remade-project.eu/wp-content/uploads/2024/07/241206_ReMade@ARI_webinars_Sall.jpg
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